PartNumber | MJB44H11T4-A | MJB44H11T4 | MJB44H11T |
Description | Bipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistor | Bipolar Transistors - BJT 8A 80V 50W NPN | |
Manufacturer | STMicroelectronics | ON Semiconductor | ON |
Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - BJT | Transistors (BJT) - Single |
RoHS | Y | N | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | D2PAK-3 | TO-263-3 | - |
Series | MJB44H11T4-A | - | - |
Packaging | Reel | Reel | - |
Brand | STMicroelectronics | ON Semiconductor | - |
Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors | - |
Qualification | AEC-Q101 | - | - |
Factory Pack Quantity | 1000 | 800 | - |
Subcategory | Transistors | Transistors | - |
Unit Weight | 0.079014 oz | - | - |
Transistor Polarity | - | NPN | - |
Configuration | - | Single | - |
Collector Emitter Voltage VCEO Max | - | 80 V | - |
Collector Base Voltage VCBO | - | 5 V | - |
Emitter Base Voltage VEBO | - | 5 V | - |
Collector Emitter Saturation Voltage | - | 1 V | - |
Maximum DC Collector Current | - | 10 A | - |
Gain Bandwidth Product fT | - | 50 MHz | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Height | - | 4.83 mm (Max) | - |
Length | - | 10.29 mm (Max) | - |
Width | - | 9.65 mm (Max) | - |
Continuous Collector Current | - | 10 A | - |
DC Collector/Base Gain hfe Min | - | 60 | - |
Pd Power Dissipation | - | 50 W | - |