MJB44H11T

MJB44H11T4-A vs MJB44H11T4 vs MJB44H11T

 
PartNumberMJB44H11T4-AMJB44H11T4MJB44H11T
DescriptionBipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistorBipolar Transistors - BJT 8A 80V 50W NPN
ManufacturerSTMicroelectronicsON SemiconductorON
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseD2PAK-3TO-263-3-
SeriesMJB44H11T4-A--
PackagingReelReel-
BrandSTMicroelectronicsON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors-
QualificationAEC-Q101--
Factory Pack Quantity1000800-
SubcategoryTransistorsTransistors-
Unit Weight0.079014 oz--
Transistor Polarity-NPN-
Configuration-Single-
Collector Emitter Voltage VCEO Max-80 V-
Collector Base Voltage VCBO-5 V-
Emitter Base Voltage VEBO-5 V-
Collector Emitter Saturation Voltage-1 V-
Maximum DC Collector Current-10 A-
Gain Bandwidth Product fT-50 MHz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Height-4.83 mm (Max)-
Length-10.29 mm (Max)-
Width-9.65 mm (Max)-
Continuous Collector Current-10 A-
DC Collector/Base Gain hfe Min-60-
Pd Power Dissipation-50 W-
Hersteller Teil # Beschreibung RFQ
MJB44H11T4G Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11T Neu und Original
MJB44H11T4G B44H11G Neu und Original
STMicroelectronics
STMicroelectronics
MJB44H11T4-A Bipolar Transistors - Pre-Biased Automotive-grade low voltage NPN power transistor
MJB44H11T4-A TRANS NPN 80V 10A D2PAK-3
MJB44H11T4 Bipolar Transistors - Pre-Biased 80V Low Voltage NPN 5V VEBO 10A IC 50W
ON Semiconductor
ON Semiconductor
MJB44H11T4 Bipolar Transistors - BJT 8A 80V 50W NPN
MJB44H11T4G Bipolar Transistors - BJT 8A 80V 50W NPN
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