MJD117G

MJD117G vs MJD117G J117G vs MJD117G-I

 
PartNumberMJD117GMJD117G J117GMJD117G-I
DescriptionDarlington Transistors 2A 100V Bipolar Power PNP
ManufacturerON Semiconductor--
Product CategoryDarlington Transistors--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Collector Emitter Voltage VCEO Max100 V--
Emitter Base Voltage VEBO5 V--
Collector Base Voltage VCBO100 V--
Maximum DC Collector Current2 A--
Maximum Collector Cut off Current20 uA--
Pd Power Dissipation20 W--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3 (DPAK)--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD117--
PackagingTube--
Height2.38 mm--
Length6.73 mm--
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current2 A--
DC Collector/Base Gain hfe Min200, 500, 1000--
Product TypeDarlington Transistors--
Factory Pack Quantity75--
SubcategoryTransistors--
Unit Weight0.021552 oz--
Hersteller Teil # Beschreibung RFQ
MJD117G Darlington Transistors 2A 100V Bipolar Power PNP
MJD117G/MJD112G Neu und Original
MJD117G J117G Neu und Original
MJD117G-I Neu und Original
ON Semiconductor
ON Semiconductor
MJD117G Darlington Transistors 2A 100V Bipolar Power PNP
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