MJD2955T4G

MJD2955T4G vs MJD2955T4G/MJD3055 vs MJD2955T4G-CUT TAPE

 
PartNumberMJD2955T4GMJD2955T4G/MJD3055MJD2955T4G-CUT TAPE
DescriptionBipolar Transistors - BJT 10A 60V 20W PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max60 V--
Collector Base Voltage VCBO70 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.1 V--
Maximum DC Collector Current10 A--
Gain Bandwidth Product fT2 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD2955--
Height2.38 mm--
Length6.73 mm--
PackagingReel--
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current10 A--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation20 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.012381 oz--
Hersteller Teil # Beschreibung RFQ
MJD2955T4G Bipolar Transistors - BJT 10A 60V 20W PNP
MJD2955T4G/MJD3055 Neu und Original
MJD2955T4G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
MJD2955T4G Bipolar Transistors - BJT 10A 60V 20W PNP
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