MJD31C-1 stock, MJD31C-1, MJD31C-13


PartNumber	MJD31C-13	MJD31C-1	MJD31C-13-CUT TAPE
Description	Bipolar Transistors - BJT 100V 5A NPN SMT	Bipolar Junction Transistor, NPN Type, TO-252VAR
Manufacturer	Diodes Incorporated	DIODES	-
Product Category	Bipolar Transistors - BJT	Transistors (BJT) - Single	-
RoHS	Y	-	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	DPAK-3	-	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	100 V	-	-
Collector Base Voltage VCBO	100 V	-	-
Emitter Base Voltage VEBO	5 V	-	-
Collector Emitter Saturation Voltage	1.2 V	1.2 V	-
Maximum DC Collector Current	3 A	3 A	-
Gain Bandwidth Product fT	3 MHz	3 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	MJD31C	MJD31C	-
DC Current Gain hFE Max	40 at 3 A, 4 V	40 at 3 A at 4 V	-
Height	2.4 mm	-	-
Length	6.8 mm	-	-
Packaging	Reel	Reel	-
Width	6.2 mm	-	-
Brand	Diodes Incorporated	-	-
Continuous Collector Current	3 A	3 A	-
DC Collector/Base Gain hfe Min	25	-	-
Pd Power Dissipation	1560 mW	-	-
Product Type	BJTs - Bipolar Transistors	-	-
Factory Pack Quantity	2500	-	-
Subcategory	Transistors	-	-
Unit Weight	0.012346 oz	0.012346 oz	-
Package Case	-	DPAK-3	-
Pd Power Dissipation	-	1560 mW	-
Collector Emitter Voltage VCEO Max	-	100 V	-
Collector Base Voltage VCBO	-	100 V	-
Emitter Base Voltage VEBO	-	5 V	-
DC Collector Base Gain hfe Min	-	25	-

Search Part Number : "MJD31C-1", Match & Start with "MJD31C-1" - Total : 5

Hersteller	Teil #	Beschreibung
Diodes Incorporated	MJD31C-13	Bipolar Transistors - BJT 100V 5A NPN SMT
	MJD31C-1	Bipolar Junction Transistor, NPN Type, TO-252VAR
	MJD31C-1G	Neu und Original
	MJD31C-13-CUT TAPE	Neu und Original
	MJD31C-13	Bipolar Transistors - BJT 100V 5A NPN SMT

MJD31C-1