MJD50T4G

MJD50T4G vs MJD50T4G J50G vs MJD50T4G-CUT TAPE

 
PartNumberMJD50T4GMJD50T4G J50GMJD50T4G-CUT TAPE
DescriptionBipolar Transistors - BJT 1A 400V 15W NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO500 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1 V--
Maximum DC Collector Current1 A--
Gain Bandwidth Product fT10 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJD50--
Height2.38 mm--
Length6.73 mm--
PackagingReel--
Width6.22 mm--
BrandON Semiconductor--
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min30--
Pd Power Dissipation15 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
MJD50T4G Bipolar Transistors - BJT 1A 400V 15W NPN
MJD50T4G J50G Neu und Original
MJD50T4G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
MJD50T4G Bipolar Transistors - BJT 1A 400V 15W NPN
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