MJE172S

MJE172STU vs MJE172S vs MJE172STU PB

 
PartNumberMJE172STUMJE172SMJE172STU PB
DescriptionBipolar Transistors - BJT PNP Epitaxial Sil
ManufacturerON SemiconductorFairchild Semiconductor-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-126-3--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 80 V--
Collector Base Voltage VCBO- 100 V--
Emitter Base Voltage VEBO- 7 V--
Collector Emitter Saturation Voltage- 1.7 V- 1.7 V-
Maximum DC Collector Current3 A3 A-
Gain Bandwidth Product fT50 MHz50 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMJE172--
DC Current Gain hFE Max250250-
Height11 mm--
Length8 mm--
Width3.25 mm--
BrandON Semiconductor / Fairchild--
Continuous Collector Current- 3 A- 3 A-
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation12.5 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1920--
SubcategoryTransistors--
Part # AliasesMJE172STU_NL--
Unit Weight0.026843 oz0.026843 oz-
Packaging-Tube-
Part Aliases-MJE172STU_NL-
Package Case-TO-225AA, TO-126-3-
Mounting Type-Through Hole-
Supplier Device Package-TO-126-
Power Max-1.5W-
Transistor Type-PNP-
Current Collector Ic Max-3A-
Voltage Collector Emitter Breakdown Max-80V-
DC Current Gain hFE Min Ic Vce-50 @ 100mA, 1V-
Vce Saturation Max Ib Ic-1.7V @ 600mA, 3A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-50MHz-
Pd Power Dissipation-12.5 W-
Collector Emitter Voltage VCEO Max-- 80 V-
Collector Base Voltage VCBO-- 100 V-
Emitter Base Voltage VEBO-- 7 V-
DC Collector Base Gain hfe Min-50-
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
MJE172STU Bipolar Transistors - BJT PNP Epitaxial Sil
MJE172S Neu und Original
MJE172STU PB Neu und Original
ON Semiconductor
ON Semiconductor
MJE172STU TRANS PNP 80V 3A TO-126
Top