MJL21195G stock, MJL21195G, MJL21195G


PartNumber	MJL21195G	MJL21195G.	MJL21195G/MJL21196G
Description	Bipolar Transistors - BJT BIP PNP 16A 250V FG
Manufacturer	ON Semiconductor	-	ON
Product Category	Bipolar Transistors - BJT	-	Transistors (BJT) - Single
RoHS	Y	-	-
Mounting Style	Through Hole	-	Through Hole
Package / Case	TO-264-3	-	-
Transistor Polarity	PNP	-	PNP
Configuration	Single	-	Single
Collector Emitter Voltage VCEO Max	250 V	-	-
Collector Base Voltage VCBO	400 V	-	-
Emitter Base Voltage VEBO	5 V	-	-
Maximum DC Collector Current	16 A	-	16 A
Gain Bandwidth Product fT	4 MHz	-	4 MHz
Minimum Operating Temperature	- 65 C	-	- 65 C
Maximum Operating Temperature	+ 150 C	-	+ 150 C
Series	MJL21195	-	MJL21195
Height	26.4 mm	-	-
Length	20.3 mm	-	-
Packaging	Tube	-	Tube
Width	5.3 mm	-	-
Brand	ON Semiconductor	-	-
DC Collector/Base Gain hfe Min	25	-	-
Pd Power Dissipation	200000 mW	-	-
Product Type	BJTs - Bipolar Transistors	-	-
Factory Pack Quantity	25	-	-
Subcategory	Transistors	-	-
Unit Weight	0.480008 oz	-	-
Package Case	-	-	TO-264-3, TO-264AA
Mounting Type	-	-	Through Hole
Supplier Device Package	-	-	TO-264
Power Max	-	-	200W
Transistor Type	-	-	PNP
Current Collector Ic Max	-	-	16A
Voltage Collector Emitter Breakdown Max	-	-	250V
DC Current Gain hFE Min Ic Vce	-	-	25 @ 8A, 5V
Vce Saturation Max Ib Ic	-	-	4V @ 3.2A, 16A
Current Collector Cutoff Max	-	-	100μA
Frequency Transition	-	-	4MHz
Pd Power Dissipation	-	-	200000 mW
Collector Emitter Voltage VCEO Max	-	-	250 V
Collector Base Voltage VCBO	-	-	400 V
Emitter Base Voltage VEBO	-	-	5 V
DC Collector Base Gain hfe Min	-	-	25

Search Part Number : "MJL21195G", Match & Start with "MJL21195G" - Total : 4

Hersteller	Teil #	Beschreibung
	MJL21195G	Bipolar Transistors - BJT BIP PNP 16A 250V FG
	MJL21195G.	Neu und Original
	MJL21195G/MJL21196G	Neu und Original
ON Semiconductor	MJL21195G	Bipolar Transistors - BJT BIP PNP 16A 250V FG

MJL21195G