MJW21194G

MJW21194G vs MJW21194G/MJW21193G vs MJW21194GB

 
PartNumberMJW21194GMJW21194G/MJW21193GMJW21194GB
DescriptionBipolar Transistors - BJT 16A 250V 200W NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleThrough Hole--
Package / CaseTO-247-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max250 V--
Collector Base Voltage VCBO400 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage1.4 V--
Maximum DC Collector Current16 A--
Gain Bandwidth Product fT4 MHz--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesMJW21194--
DC Current Gain hFE Max80--
Height21.08 mm--
Length16.26 mm--
PackagingTube--
Width5.3 mm--
BrandON Semiconductor--
Continuous Collector Current16 A--
DC Collector/Base Gain hfe Min20--
Pd Power Dissipation200 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity30--
SubcategoryTransistors--
Unit Weight1.340411 oz--
Hersteller Teil # Beschreibung RFQ
MJW21194G Bipolar Transistors - BJT 16A 250V 200W NPN
MJW21194G/MJW21193G Neu und Original
MJW21194GB Neu und Original
ON Semiconductor
ON Semiconductor
MJW21194G Bipolar Transistors - BJT 16A 250V 200W NPN
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