 |  | | |
| PartNumber | MMBT2222AWT1G | MMBT2222AWT1G , MAX6717U | MMBT2222AWT1G(P1) |
| Description | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 40V | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 40 V | - | - |
| Collector Base Voltage VCBO | 75 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 1 V | - | - |
| Maximum DC Collector Current | 0.6 A | - | - |
| Gain Bandwidth Product fT | 300 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MMBT2222AW | - | - |
| Height | 0.85 mm | - | - |
| Length | 2.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.24 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.6 A | - | - |
| DC Collector/Base Gain hfe Min | 35 | - | - |
| Pd Power Dissipation | 150 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000219 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| MMBT2222AWT1G | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 40V | ||
| MMBT2222AWT1G , MAX6717U | Neu und Original | ||
| MMBT2222AWT1G(P1) | Neu und Original | ||
| MMBT2222AWT1H | SS SC70 GP XSTR NPN 40V | ||
| MMBT2222AWT1G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
MMBT2222AWT1 | TRANS NPN 40V 0.6A SOT323 | |
| MMBT2222AWT1G | Bipolar Transistors - BJT SS SOT23 GP XSTR NPN 40V |