 |  | | |
| PartNumber | MMBT6428LT1G | MMBT6428L | MMBT6428LT1G , MAX6389XS |
| Description | Bipolar Transistors - BJT 200mA 60V NPN | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 40 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Collector Emitter Saturation Voltage | 0.6 V | - | - |
| Maximum DC Collector Current | 0.2 A | - | - |
| Gain Bandwidth Product fT | 700 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MMBT6428L | - | - |
| DC Current Gain hFE Max | 650 | - | - |
| Height | 0.94 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.3 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.2 A | - | - |
| DC Collector/Base Gain hfe Min | 250 | - | - |
| Pd Power Dissipation | 225 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| MMBT6428LT1G | Bipolar Transistors - BJT 200mA 60V NPN | ||
| MMBT6428L | Neu und Original | ||
| MMBT6428LT1G , MAX6389XS | Neu und Original | ||
| MMBT6428LT1G , MAX6389XS46D3 | Neu und Original | ||
| MMBT6428LT1G(1KM) | Neu und Original | ||
| MMBT6428LT1G-CUT TAPE | Neu und Original | ||
ON Semiconductor |
MMBT6428LT1 | Bipolar Transistors - BJT 200mA 60V NPN | |
| MMBT6428LT1 | TRANS NPN 50V 0.2A SOT23 | ||
| MMBT6428LT1G | Bipolar Transistors - BJT 200mA 60V NPN |