MMBT8099LT1G

MMBT8099LT1G vs MMBT8099LT1G , BZX88-C33 vs MMBT8099LT1G D9D

 
PartNumberMMBT8099LT1GMMBT8099LT1G , BZX88-C33MMBT8099LT1G D9D
DescriptionBipolar Transistors - BJT 500mA 80V NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.4 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT150 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMBT8099L--
DC Current Gain hFE Max300--
Height0.94 mm--
Length2.9 mm--
PackagingReel--
Width1.3 mm--
BrandON Semiconductor--
Continuous Collector Current0.5 A--
Pd Power Dissipation225 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
MMBT8099LT1G Bipolar Transistors - BJT 500mA 80V NPN
MMBT8099LT1G , BZX88-C33 Neu und Original
MMBT8099LT1G D9D Neu und Original
MMBT8099LT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
MMBT8099LT1G Bipolar Transistors - BJT 500mA 80V NPN
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