MMBTH11

MMBTH11 vs MMBTH11 , CA201-4V3 vs MMBTH11 3G

 
PartNumberMMBTH11MMBTH11 , CA201-4V3MMBTH11 3G
DescriptionRF Bipolar Transistors NPN RF Transistor
ManufacturerON Semiconductor--
Product CategoryRF Bipolar Transistors--
RoHSY--
SeriesMMBTH11--
Transistor TypeBipolar--
TechnologySi--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min60--
Collector Emitter Voltage VCEO Max25 V--
Emitter Base Voltage VEBO3 V--
Continuous Collector Current0.05 A--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseSOT-23--
PackagingReel--
Collector Base Voltage VCBO30 V--
DC Current Gain hFE Max60 at 4 mA at 10 V--
Height0.93 mm--
Length2.92 mm--
Operating Frequency650 MHz--
TypeRF Bipolar Small Signal--
Width1.3 mm--
BrandON Semiconductor / Fairchild--
Gain Bandwidth Product fT650 MHz (Min)--
Maximum DC Collector Current0.05 A--
Pd Power Dissipation225 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
MMBTH11 RF Bipolar Transistors NPN RF Transistor
MMBTH11 , CA201-4V3 Neu und Original
MMBTH11 3G Neu und Original
MMBTH11-NL Neu und Original
MMBTH11LT1 Neu und Original
MMBTH11LT1G Neu und Original
MMBTH11_Q Bipolar Transistors - BJT NPN RF Transisto
ON Semiconductor
ON Semiconductor
MMBTH11 RF TRANS NPN 25V 650MHZ SOT23-3
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