MMDF2P0

MMDF2P02ER2G vs MMDF2P02HDR2 vs MMDF2P02HDR2G

 
PartNumberMMDF2P02ER2GMMDF2P02HDR2MMDF2P02HDR2G
DescriptionMOSFET PFET 25V 2.5A 250MOMOSFET 2P-CH 20V 3.3A 8-SOICMOSFET 2P-CH 20V 3.3A 8-SOIC
ManufacturerON Semiconductor--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels2 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current2.5 A--
Rds On Drain Source Resistance250 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length5 mm--
Transistor Type2 P-Channel--
TypeMOSFET--
Width4 mm--
BrandON Semiconductor--
Forward Transconductance Min2.8 S--
Fall Time41 ns, 28 ns--
Product TypeMOSFET--
Rise Time40 ns, 29 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time53 ns, 30 ns--
Typical Turn On Delay Time20 ns, 13 ns--
Unit Weight0.006596 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
MMDF2P02ER2G MOSFET PFET 25V 2.5A 250MO
MMDF2P02ER2G MOSFET 2P-CH 25V 2.5A 8SOIC
MMDF2P02HDR2 MOSFET 2P-CH 20V 3.3A 8-SOIC
MMDF2P02HDR2G MOSFET 2P-CH 20V 3.3A 8-SOIC
MMDF2P01 HDR2 Neu und Original
MMDF2P01HD Neu und Original
MMDF2P01HDR2 Power Field-Effect Transistor, 3.4A I(D), 12V, 0.18ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MMDF2P01HDR2G Neu und Original
MMDF2P02 Neu und Original
MMDF2P02E Neu und Original
MMDF2P02ER1 Neu und Original
MMDF2P02ER2 MOSFET 25V 2A P-Channel
MMDF2P02HD Neu und Original
MMDF2P02HD2G Neu und Original
MMDF2P02HDR2G D2P02 Neu und Original
MMDF2P03HD Neu und Original
MMDF2P03HDR2 MOSFET Transistor, Matched Pair, P-Channel, SO
MMDF2P03HDR2 , CGY121A Neu und Original
MMDF2P03HDR2G Neu und Original
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