MMI

MMIX4G20N250 vs MMIZ10V vs MMIZ16

 
PartNumberMMIX4G20N250MMIZ10VMMIZ16
DescriptionIGBT Modules DISC IGBT SMPD PKG-STANDARD
ManufacturerIXYS--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Modules--
ConfigurationHalf Bridge--
Collector Emitter Voltage VCEO Max2.5 kV--
Collector Emitter Saturation Voltage3.1 V--
Continuous Collector Current at 25 C23 A--
Gate Emitter Leakage Current100 nA--
Package / CaseSMPD-24--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
SeriesStandard--
BrandIXYS--
Mounting StyleSMD/SMT--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity20--
SubcategoryIGBTs--
  • Beginnen mit
  • MMI 184
Hersteller Teil # Beschreibung RFQ
MMIX4G20N250 MOSFET N-CH
MMIZ10V Neu und Original
MMIZ16 Neu und Original
MMIZ3V Neu und Original
MMIZ5232B Neu und Original
MMIZ7V5 Neu und Original
Top