MMJT3

MMJT350T1G vs MMJT350T1 vs MMJT350T1/T350

 
PartNumberMMJT350T1GMMJT350T1MMJT350T1/T350
DescriptionBipolar Transistors - BJT 0.5A 30V 2.75W PNPBipolar Transistors - BJT 0.5A 30V 2.75W PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYN-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max300 V300 V-
Collector Base Voltage VCBO300 V300 V-
Emitter Base Voltage VEBO3 V5 V-
Maximum DC Collector Current0.5 A0.5 A-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMJT350T1--
Height1.57 mm1.57 mm-
Length6.5 mm6.5 mm-
PackagingReelReel-
Width3.5 mm3.5 mm-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current0.5 A0.5 A-
DC Collector/Base Gain hfe Min3030-
Pd Power Dissipation2.75 W2.75 W-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity10001000-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz-
Hersteller Teil # Beschreibung RFQ
MMJT350T1G Bipolar Transistors - BJT 0.5A 30V 2.75W PNP
MMJT350T1/T350 Neu und Original
ON Semiconductor
ON Semiconductor
MMJT350T1 Bipolar Transistors - BJT 0.5A 30V 2.75W PNP
MMJT350T1 TRANS PNP 300V 0.5A SOT-223
MMJT350T1G Bipolar Transistors - BJT 0.5A 30V 2.75W PNP
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