MMJT9435T1G

MMJT9435T1G vs MMJT9435T1G 9435 ON SOT2 vs MMJT9435T1G-ON

 
PartNumberMMJT9435T1GMMJT9435T1G 9435 ON SOT2MMJT9435T1G-ON
DescriptionBipolar Transistors - BJT 3A 30V 3W PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max30 V--
Collector Base Voltage VCBO45 V--
Emitter Base Voltage VEBO6 V--
Collector Emitter Saturation Voltage0.155 V--
Maximum DC Collector Current3 A--
Gain Bandwidth Product fT110 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Height1.57 mm--
Length6.5 mm--
PackagingReel--
Width3.5 mm--
BrandON Semiconductor--
Continuous Collector Current1 A--
DC Collector/Base Gain hfe Min125--
Pd Power Dissipation3 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
MMJT9435T1G Bipolar Transistors - BJT 3A 30V 3W PNP
MMJT9435T1G TRANS PNP 30V 3A SOT223
MMJT9435T1G 9435 ON SOT2 Neu und Original
MMJT9435T1G-ON Neu und Original
MMJT9435T1G/MMJT9410 Neu und Original
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