MMUN2111LT1

MMUN2111LT1G vs MMUN2111LT1 vs MMUN2111LT1G A6A

 
PartNumberMMUN2111LT1GMMUN2111LT1MMUN2111LT1G A6A
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNPBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationSingleSingle-
Transistor PolarityPNPPNP-
Typical Input Resistor10 kOhms10 kOhms-
Typical Resistor Ratio11-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-3SOT-23-3-
DC Collector/Base Gain hfe Min3535-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation246 mW246 mW-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMMUN2111L--
PackagingReelReel-
DC Current Gain hFE Max3535-
Height0.94 mm0.94 mm-
Length2.9 mm2.9 mm-
Width1.3 mm1.3 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.049384 oz0.000282 oz-
Hersteller Teil # Beschreibung RFQ
MMUN2111LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2111LT1G A6A Neu und Original
MMUN2111LT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
MMUN2111LT1 Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2111LT1 TRANS PREBIAS PNP 246MW SOT23-3
MMUN2111LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
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