MMUN2112LT1G

MMUN2112LT1G vs MMUN2112LT1G , MAX6423XS vs MMUN2112LT1G-CUT TAPE

 
PartNumberMMUN2112LT1GMMUN2112LT1G , MAX6423XSMMUN2112LT1G-CUT TAPE
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT PNP
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityPNP--
Typical Input Resistor22 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min60--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation246 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMUN2112L--
PackagingReel--
DC Current Gain hFE Max60--
Height0.94 mm--
Length2.9 mm--
Width1.3 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
MMUN2112LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
MMUN2112LT1G , MAX6423XS Neu und Original
MMUN2112LT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
MMUN2112LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Top