MMUN2213

MMUN2213LT1G vs MMUN2213LT1 , CMPTH10TR vs MMUN2213LT1G , CMPZ4689

 
PartNumberMMUN2213LT1GMMUN2213LT1 , CMPTH10TRMMUN2213LT1G , CMPZ4689
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT NPN
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationSingle--
Transistor PolarityNPN--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-23-3--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current0.1 A--
Peak DC Collector Current100 mA--
Pd Power Dissipation246 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMMUN2213L--
PackagingReel--
DC Current Gain hFE Max80--
Height0.94 mm--
Length2.9 mm--
Width1.3 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000282 oz--
Hersteller Teil # Beschreibung RFQ
MMUN2213LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
MMUN2213LT1 , CMPTH10TR Neu und Original
MMUN2213LT1G , CMPZ4689 Neu und Original
MMUN2213LT1G A8C Neu und Original
MMUN2213LT1G A8C 6C Neu und Original
MMUN2213RLT1 Neu und Original
MMUN2213RLTIG Neu und Original
MMUN2213T1 Neu und Original
MMUN2213LT1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
MMUN2213LT1 Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
MMUN2213LT1 TRANS PREBIAS NPN 246MW SOT23-3
MMUN2213LT1G Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN
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