MPS6602 stock, MPS6602, MPS6602RLRAG


PartNumber	MPS6602RLRAG	MPS6602	MPS6602G
Description	Bipolar Transistors - BJT 1A 30V NPN	Bipolar Transistors - BJT 1A 30V NPN	TRANS NPN 40V 1A TO92
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	N	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	TO-92-3	TO-92-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	30 V	30 V	-
Collector Base Voltage VCBO	45 V	45 V	-
Emitter Base Voltage VEBO	4 V	4 V	-
Collector Emitter Saturation Voltage	0.6 V	0.6 V	-
Maximum DC Collector Current	1 A	1 A	-
Gain Bandwidth Product fT	100 MHz	100 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Height	5.33 mm (Max)	5.33 mm (Max)	-
Length	5.2 mm (Max)	5.2 mm (Max)	-
Packaging	Reel	Bulk	-
Width	4.19 mm (Max)	4.19 mm (Max)	-
Brand	ON Semiconductor	ON Semiconductor	-
Continuous Collector Current	0.5 A	0.5 A	-
DC Collector/Base Gain hfe Min	50	50	-
Pd Power Dissipation	1 W	1 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	2000	5000	-
Subcategory	Transistors	Transistors	-

Search Part Number : "MPS6602", Match & Start with "MPS6602" - Total : 6

Hersteller	Teil #	Beschreibung
ON Semiconductor	MPS6602RLRAG	Bipolar Transistors - BJT 1A 30V NPN
	MPS6602	Bipolar Transistors - BJT 1A 30V NPN
	MPS6602	TRANS NPN 40V 1A TO92
	MPS6602G	TRANS NPN 40V 1A TO92
	MPS6602RLRAG	TRANS NPN 40V 1A TO-92
	MPS6602RLRA	Bipolar Transistors - BJT 1A 30V NPN

MPS6602