MPSW06R

MPSW06RLRA vs MPSW06RLTRA vs MPSW06RLRAG

 
PartNumberMPSW06RLRAMPSW06RLTRAMPSW06RLRAG
DescriptionBipolar Transistors - BJT 500mA 80V 1W NPNBipolar Transistors - BJT 500mA 80V 1W NPN
ManufacturerON Semiconductor-ON-SEMI
Product CategoryBipolar Transistors - BJT-Transistors (BJT) - Single
RoHSN--
Mounting StyleThrough Hole--
Package / CaseTO-92-3-TO-226-3, TO-92-3 Long Body (Formed Leads)
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max80 V--
Collector Base Voltage VCBO80 V--
Emitter Base Voltage VEBO4 V--
Collector Emitter Saturation Voltage0.4 V--
Maximum DC Collector Current0.5 A--
Gain Bandwidth Product fT50 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Height7.87 mm--
Length5.21 mm--
PackagingReel-Cut Tape (CT)
Width4.19 mm--
BrandON Semiconductor--
Continuous Collector Current0.5 A--
DC Collector/Base Gain hfe Min80--
Pd Power Dissipation1 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2000--
SubcategoryTransistors--
Series---
Part Status--Obsolete
Transistor Type--NPN
Current Collector (Ic) (Max)--500mA
Voltage Collector Emitter Breakdown (Max)--80V
Vce Saturation (Max) @ Ib, Ic--400mV @ 10mA, 250mA
Current Collector Cutoff (Max)--500nA
DC Current Gain (hFE) (Min) @ Ic, Vce--60 @ 250mA, 1V
Power Max--1W
Frequency Transition--50MHz
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Through Hole
Supplier Device Package--TO-92 (TO-226)
Base Part Number--MPSW06
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
MPSW06RLRA Bipolar Transistors - BJT 500mA 80V 1W NPN
MPSW06RLRA TRANS NPN 80V 0.5A TO92
MPSW06RLRAG Bipolar Transistors - BJT 500mA 80V 1W NPN
MPSW06RLTRA Neu und Original
Top