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| PartNumber | MRF9210R3 | MRF9210R5 |
| Description | RF MOSFET Transistors 200W RF LDMOS NI860ML | RF MOSFET Transistors 200W RF LDMOS NI860ML |
| Manufacturer | NXP | NXP |
| Product Category | RF MOSFET Transistors | RF MOSFET Transistors |
| RoHS | Y | N |
| Transistor Polarity | N-Channel | N-Channel |
| Technology | Si | Si |
| Vds Drain Source Breakdown Voltage | 65 V | 65 V |
| Gain | 16.5 dB | 16.5 dB |
| Output Power | 40 W | 40 W |
| Minimum Operating Temperature | - 65 C | - 65 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | NI-860C3-5 | NI-860C3-5 |
| Packaging | Reel | Reel |
| Configuration | Single | Single |
| Height | 5.69 mm | 5.69 mm |
| Length | 34.16 mm | 34.16 mm |
| Operating Frequency | 865 MHz to 895 MHz | 865 MHz to 895 MHz |
| Type | RF Power MOSFET | RF Power MOSFET |
| Width | 10.31 mm | 10.31 mm |
| Brand | NXP / Freescale | NXP / Freescale |
| Channel Mode | Enhancement | Enhancement |
| Pd Power Dissipation | 565 W | 565 W |
| Product Type | RF MOSFET Transistors | RF MOSFET Transistors |
| Factory Pack Quantity | 250 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Vgs Gate Source Voltage | - 0.5 V, 15 V | - 0.5 V, 15 V |
| Vgs th Gate Source Threshold Voltage | 2.8 V | 2.8 V |
| Unit Weight | 0.223087 oz | 0.223087 oz |
