 |  | | |
| PartNumber | MSA1162GT1G | MSA1162GT1G , D17226-140 | MSA1162GT1G 62G |
| Description | Bipolar Transistors - BJT 100mA 60V PNP | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-59-3 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 0.5 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 80 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MSA1162 | - | - |
| Height | 1.09 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.5 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Continuous Collector Current | 0.1 uA | - | - |
| DC Collector/Base Gain hfe Min | 200 | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000282 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| MSA1162GT1G | Bipolar Transistors - BJT 100mA 60V PNP | ||
| MSA1162GT1G , D17226-140 | Neu und Original | ||
| MSA1162GT1G 62G | Neu und Original | ||
| MSA1162GT1GP | Neu und Original | ||
| MSA1162GT1GH6-PANA | - Bulk (Alt: MSA1162GT1GH6-PANA) | ||
ON Semiconductor |
MSA1162GT1G | Neu und Original |