PartNumber | MSA1162YT1 | MSA1162YT1G |
Description | Bipolar Transistors - BJT 100mA 60V PNP | Bipolar Transistors - BJT 100mA 60V PNP |
Manufacturer | ON Semiconductor | ON Semiconductor |
Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
RoHS | N | Y |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | SC-59-3 | SC-59-3 |
Transistor Polarity | PNP | PNP |
Configuration | Single | Single |
Collector Emitter Voltage VCEO Max | 50 V | 50 V |
Collector Base Voltage VCBO | 60 V | 60 V |
Emitter Base Voltage VEBO | 7 V | 7 V |
Collector Emitter Saturation Voltage | 0.5 V | 0.5 V |
Maximum DC Collector Current | 0.1 A | 0.1 A |
Gain Bandwidth Product fT | 80 MHz | 80 MHz |
Maximum Operating Temperature | + 150 C | + 150 C |
Height | 1.09 mm | 1.09 mm |
Length | 2.9 mm | 2.9 mm |
Packaging | Reel | Reel |
Width | 1.5 mm | 1.5 mm |
Brand | ON Semiconductor | ON Semiconductor |
Continuous Collector Current | 0.1 uA | 0.1 uA |
DC Collector/Base Gain hfe Min | 120 | 120 |
Pd Power Dissipation | 200 mW | 200 mW |
Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
Factory Pack Quantity | 3000 | 3000 |
Subcategory | Transistors | Transistors |
Unit Weight | 0.000282 oz | 0.000282 oz |
Minimum Operating Temperature | - | - 55 C |