MT3S113

MT3S113(TE85L,F) vs MT3S113(TE85LF)CT-ND vs MT3S113

 
PartNumberMT3S113(TE85L,F)MT3S113(TE85LF)CT-NDMT3S113
DescriptionRF Bipolar Transistors RF Bipolar Transistor .1A 800mW
ManufacturerToshiba-TOSHIBA
Product CategoryRF Bipolar Transistors-IC Chips
RoHSY--
SeriesMT3S113--
Transistor TypeBipolar--
TechnologySiGe--
Transistor PolarityNPN--
DC Collector/Base Gain hfe Min200--
Collector Emitter Voltage VCEO Max5.3 V--
Emitter Base Voltage VEBO0.6 V--
Continuous Collector Current100 mA--
Maximum Operating Temperature+ 150 C--
ConfigurationSingle--
Mounting StyleSMD/SMT--
Package / CaseTO-236-3--
PackagingReel--
Operating Frequency12.5 GHz--
BrandToshiba--
Maximum DC Collector Current100 mA--
Pd Power Dissipation800 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
Toshiba
Toshiba
MT3S113P(TE12L,F) RF Bipolar Transistors RF Bipolar Transistor .1A 1.6W
MT3S113TU,LF RF Bipolar Transistors RF Bipolar Transistor .1A 900mW
MT3S113(TE85L,F) RF Bipolar Transistors RF Bipolar Transistor .1A 800mW
MT3S113TULF Trans RF BJT NPN 5.3V 0.1A 3-Pin UFM - Tape and Reel (Alt: MT3S113TU,LF)
MT3S113(TE85LF)CT-ND Neu und Original
MT3S113(TE85LF)DKR-ND Neu und Original
MT3S113(TE85LF)TR-ND Neu und Original
MT3S113P(TE12LF)CT-ND Neu und Original
MT3S113P(TE12LF)DKR-ND Neu und Original
MT3S113P(TE12LF)TR-ND Neu und Original
MT3S113TULFCT-ND Neu und Original
MT3S113TULFDKR-ND Neu und Original
MT3S113TULFTR-ND Neu und Original
MT3S113 Neu und Original
MT3S113P Neu und Original
MT3S113TU Neu und Original
MT3S113TU , MAX6707SKA Neu und Original
MT3S113TU(TE85L) Neu und Original
MT3S113TU,LF(T Neu und Original
MT3S113TULF(T Neu und Original
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