 |  | | |
| PartNumber | MT3S16U(TE85L,F) | MT3S16FS | MT3S16U |
| Description | RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz | ||
| Manufacturer | Toshiba | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Series | MT3S16 | - | - |
| Transistor Type | Bipolar | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 80 | - | - |
| Collector Emitter Voltage VCEO Max | 5 V | - | - |
| Emitter Base Voltage VEBO | 2 V | - | - |
| Continuous Collector Current | 60 mA | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Configuration | Single | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SC-70-3 | - | - |
| Packaging | Reel | - | - |
| Collector Base Voltage VCBO | 10 V | - | - |
| DC Current Gain hFE Max | 140 | - | - |
| Operating Frequency | 4 GHz (Typ) | - | - |
| Operating Temperature Range | - 55 C to + 125 C | - | - |
| Type | UHF Band Oscillator and Amplifier | - | - |
| Brand | Toshiba | - | - |
| Pd Power Dissipation | 100 mW | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000219 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Toshiba |
MT3S16U(TE85L,F) | RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz | |
| MT3S16U(TE85LF)CT-ND | Neu und Original | ||
| MT3S16U(TE85LF)DKR-ND | Neu und Original | ||
| MT3S16U(TE85LF)TR-ND | Neu und Original | ||
| MT3S16FS | Neu und Original | ||
| MT3S16U | Neu und Original | ||
| MT3S16U(TE85L,F) | RF Bipolar Transistors RF 50mW 5.5dB 10V USM 60mA 2GHz |