MTB50P03

MTB50P03HDLT4G vs MTB50P03HDLT4 vs MTB50P03HDLG

 
PartNumberMTB50P03HDLT4GMTB50P03HDLT4MTB50P03HDLG
DescriptionMOSFET PFET D2PAK 30V 50A 25mOhmMOSFET 30V 50A Logic LevelMOSFET PFET 30V 50A
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFETMOSFET
RoHSYNY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage30 V30 V30 V
Id Continuous Drain Current50 A50 A50 A
Rds On Drain Source Resistance25 mOhms25 mOhms25 mOhms
Vgs Gate Source Voltage15 V15 V15 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation125 W125 W125 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReel-
Height4.83 mm4.83 mm4.83 mm
Length10.29 mm10.29 mm10.29 mm
SeriesMTB50P03HDL--
Transistor Type1 P-Channel1 P-Channel1 P-Channel
TypeMOSFETMOSFET-
Width9.65 mm9.65 mm9.65 mm
BrandON SemiconductorON SemiconductorON Semiconductor
Forward Transconductance Min20 S21 S-
Fall Time218 ns218 ns218 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time340 ns340 ns340 ns
Factory Pack Quantity80080050
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time90 ns90 ns90 ns
Typical Turn On Delay Time22 ns22 ns22 ns
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
MTB50P03HDLT4G MOSFET PFET D2PAK 30V 50A 25mOhm
MTB50P03HDLT4 MOSFET 30V 50A Logic Level
MTB50P03HDLG MOSFET PFET 30V 50A
MTB50P03HDLG MOSFET P-CH 30V 50A D2PAK
MTB50P03HDLT4 MOSFET P-CH 30V 50A D2PAK
MTB50P03HDLT4G MOSFET P-CH 30V 50A D2PAK
MTB50P03 Neu und Original
MTB50P03H Neu und Original
MTB50P03HG Neu und Original
MTB50P03HGRF4G Neu und Original
MTB50P03HDLT4G-CUT TAPE Neu und Original
MTB50P03HDL TRANS MOSFET P-CH 30V 50A 3PIN D2PAK - Bulk (Alt: MTB50P03HDL)
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