MTD3055V

MTD3055V vs MTD3055VL

 
PartNumberMTD3055VMTD3055VL
DescriptionMOSFET N-Channel FET Enhancement ModeMOSFET N-Ch LL FET Enhancement Mode
ManufacturerON SemiconductorON Semiconductor
Product CategoryMOSFETMOSFET
RoHSEE
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current12 A12 A
Rds On Drain Source Resistance150 mOhms180 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation3.9 W3.9 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
PackagingReelReel
Height2.39 mm2.39 mm
Length6.73 mm6.73 mm
SeriesMTD3055VMTD3055VL
Transistor Type1 N-Channel1 N-Channel
TypeMOSFETMOSFET
Width6.22 mm6.22 mm
BrandON Semiconductor / FairchildON Semiconductor / Fairchild
Fall Time50 ns90 ns
Product TypeMOSFETMOSFET
Rise Time60 ns190 ns
Factory Pack Quantity25002500
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time30 ns30 ns
Typical Turn On Delay Time10 ns20 ns
Part # AliasesMTD3055V_NLMTD3055VL_NL
Unit Weight0.009184 oz0.009184 oz
Hersteller Teil # Beschreibung RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
MTD3055V MOSFET N-Channel FET Enhancement Mode
MTD3055VL MOSFET N-Ch LL FET Enhancement Mode
ON Semiconductor
ON Semiconductor
MTD3055V MOSFET N-CH 60V 12A DPAK
MTD3055VL MOSFET N-CH 60V 12A DPAK
MTD3055V1 Neu und Original
MTD3055VL-T4 Neu und Original
MTD3055VL1 MOSFET Transistor, N-Channel, TO-252
MTD3055VL4 Neu und Original
MTD3055VLG Neu und Original
MTD3055VLT4 MOSFET Transistor, N-Channel, TO-252
MTD3055VLT4G Neu und Original
MTD3055VT4 MOSFET Transistor, N-Channel, TO-252
MTD3055VT4G POWER FIELD-EFFECT TRANSISTOR, 12A I(D), 60V, 0.15OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
MTD3055VL-CUT TAPE Neu und Original
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