 | | ||
| PartNumber | MUN5212DW1T1G | MUN5212 | MUN5212LT1 |
| Description | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN | ||
| Manufacturer | ON Semiconductor | - | - |
| Product Category | Bipolar Transistors - Pre-Biased | - | - |
| RoHS | Y | - | - |
| Configuration | Dual | - | - |
| Transistor Polarity | NPN | - | - |
| Typical Input Resistor | 22 kOhms | - | - |
| Typical Resistor Ratio | 1 | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363-6 | - | - |
| DC Collector/Base Gain hfe Min | 60 | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Continuous Collector Current | 0.1 A | - | - |
| Peak DC Collector Current | 100 mA | - | - |
| Pd Power Dissipation | 187 mW | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | MUN5212DW1 | - | - |
| Packaging | Reel | - | - |
| DC Current Gain hFE Max | 60 at 5 mA at 10 V | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Width | 1.25 mm | - | - |
| Brand | ON Semiconductor | - | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000423 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| MUN5212T1G | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V | ||
| MUN5212DW1T1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN | ||
| MUN5212 | Neu und Original | ||
| MUN5212LT1 | Neu und Original | ||
| MUN5212T1 | Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN | ||
| MUN5212T1 / 8B | Neu und Original | ||
| MUN5212T1 , DSP10 | Neu und Original | ||
ON Semiconductor |
MUN5212DW1T1 | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual | |
| MUN5212DW1T1 | TRANS 2NPN PREBIAS 0.25W SOT363 | ||
| MUN5212DW1T1G | Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN | ||
| MUN5212T1G | Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V |