MUN5237DW1

MUN5237DW1T1G vs MUN5237DW1T1 vs MUN5237DW1

 
PartNumberMUN5237DW1T1GMUN5237DW1T1MUN5237DW1
DescriptionBipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPNBipolar Transistors - Pre-Biased 100mA 50V BRT Dual
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYN-
ConfigurationDualDual-
Transistor PolarityNPNNPN-
Typical Input Resistor47 kOhms47 kOhms-
Typical Resistor Ratio2.12.1-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-363-6SOT-363-6-
DC Collector/Base Gain hfe Min8080-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current0.1 A0.1 A-
Peak DC Collector Current100 mA100 mA-
Pd Power Dissipation187 mW187 mW-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesMUN5237DW1--
PackagingReelReel-
DC Current Gain hFE Max80 at 5 mA at 10 V80 at 5 mA at 10 V-
Height0.9 mm0.9 mm-
Length2 mm2 mm-
Width1.25 mm1.25 mm-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Unit Weight0.000265 oz0.000265 oz-
Hersteller Teil # Beschreibung RFQ
MUN5237DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
MUN5237DW1 Neu und Original
MUN5237DW1T1G Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
ON Semiconductor
ON Semiconductor
MUN5237DW1T1 Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual
MUN5237DW1T1 TRANS 2NPN PREBIAS 0.25W SOT363
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