MUN5313DW1T

MUN5313DW1T1G vs MUN5313DW1T1(13) vs MUN5313DW1T1/.13X

 
PartNumberMUN5313DW1T1GMUN5313DW1T1(13)MUN5313DW1T1/.13X
DescriptionBipolar Transistors - Pre-Biased SS BR XSTR DUAL 50V
ManufacturerON Semiconductor--
Product CategoryBipolar Transistors - Pre-Biased--
RoHSY--
ConfigurationDual--
Transistor PolarityNPN--
Typical Input Resistor47 kOhms--
Typical Resistor Ratio1--
Mounting StyleSMD/SMT--
Package / CaseSOT-363(PB-Free)-6--
DC Collector/Base Gain hfe Min80--
Collector Emitter Voltage VCEO Max50 V--
Continuous Collector Current100 mA--
Peak DC Collector Current100 mA--
Pd Power Dissipation256 mW--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesMUN5313DW1--
PackagingReel--
DC Current Gain hFE Max80--
Height0.9 mm--
Length2 mm--
Width1.25 mm--
BrandON Semiconductor--
Product TypeBJTs - Bipolar Transistors - Pre-Biased--
Factory Pack Quantity3000--
SubcategoryTransistors--
Unit Weight0.000212 oz--
Hersteller Teil # Beschreibung RFQ
MUN5313DW1T1G Bipolar Transistors - Pre-Biased SS BR XSTR DUAL 50V
MUN5313DW1T1(13) Neu und Original
MUN5313DW1T1/.13X Neu und Original
MUN5313DW1T1G , DTA114GK Neu und Original
MUN5313DW1T1G-CUT TAPE Neu und Original
ON Semiconductor
ON Semiconductor
MUN5313DW1T1 Bipolar Transistors - Pre-Biased 100mA Complementary
MUN5313DW1T1 TRANS PREBIAS NPN/PNP SOT363
MUN5313DW1T1G Bipolar Transistors - Pre-Biased SS BR XSTR DUAL 50V
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