MUN5335DW1T stock, MUN5335DW1T, MUN5335DW1T1G


PartNumber	MUN5335DW1T1G	MUN5335DW1T2G
Description	Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP	Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
Manufacturer	ON Semiconductor	ON Semiconductor
Product Category	Bipolar Transistors - Pre-Biased	Bipolar Transistors - Pre-Biased
RoHS	Y	Y
Configuration	Dual	Dual
Transistor Polarity	NPN, PNP	NPN, PNP
Typical Input Resistor	2.2 kOhms	2.2 kOhms
Typical Resistor Ratio	0.047	0.047
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	SC-88-6	SC-88-6
DC Collector/Base Gain hfe Min	80	80
Collector Emitter Voltage VCEO Max	50 V	50 V
Continuous Collector Current	0.1 A	0.1 A
Peak DC Collector Current	100 mA	100 mA
Pd Power Dissipation	187 mW	187 mW
Minimum Operating Temperature	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C
Series	MUN5335DW1	MUN5335DW1
Packaging	Reel	Reel
DC Current Gain hFE Max	80 at 5 mA at 10 V	80 at 5 mA at 10 V
Height	0.9 mm	0.9 mm
Length	2 mm	2 mm
Width	1.25 mm	1.25 mm
Brand	ON Semiconductor	ON Semiconductor
Number of Channels	2 Channel	2 Channel
Product Type	BJTs - Bipolar Transistors - Pre-Biased	BJTs - Bipolar Transistors - Pre-Biased
Factory Pack Quantity	3000	3000
Subcategory	Transistors	Transistors

Search Part Number : "MUN5335DW1T", Match & Start with "MUN5335DW1T" - Total : 9

Hersteller	Teil #	Beschreibung
ON Semiconductor	MUN5335DW1T1G	Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
	MUN5335DW1T2G	Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
	MUN5335DW1T1G	Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
	MUN5335DW1T2G	Bipolar Transistors - Pre-Biased 100mA Complementary 50V NPN & PNP
	MUN5335DW1T1	Bipolar Transistors - Pre-Biased 100mA Complementary
	MUN5335DW1T1 /35	Neu und Original
	MUN5335DW1T1(35W)	Neu und Original
	MUN5335DW1T1G , DTA124TC	Neu und Original
	MUN5335DW1T1G-CUT TAPE	Neu und Original

MUN5335DW1T