 |  |  | |
| PartNumber | MW6S010GNR1 | MW6S010GMR1 | MW6S010MR1 |
| Description | RF MOSFET Transistors HV6 900MHZ 10W | FET RF 68V 960MHZ TO270-2GW | FET RF 68V 960MHZ TO-270-2 |
| Manufacturer | NXP | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | E | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Vds Drain Source Breakdown Voltage | 68 V | - | - |
| Gain | 18 dB | - | - |
| Output Power | 10 W | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-270-2 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single | - | - |
| Height | 2.08 mm | - | - |
| Length | 9.7 mm | - | - |
| Operating Frequency | 1.5 GHz | - | - |
| Series | MW6S010N | - | - |
| Type | RF Power MOSFET | - | - |
| Width | 5.97 mm | - | - |
| Brand | NXP / Freescale | - | - |
| Channel Mode | Enhancement | - | - |
| Moisture Sensitive | Yes | - | - |
| Pd Power Dissipation | 61.4 W | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 500 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 12 V | - | - |
| Vgs th Gate Source Threshold Voltage | 2.3 V | - | - |
| Part # Aliases | 935324159528 | - | - |
| Unit Weight | 0.019330 oz | - | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
NXP / Freescale |
MW6S010NR1 | RF MOSFET Transistors HV6 900MHZ 10W TO270-2N | |
| MW6S010GNR1 | RF MOSFET Transistors HV6 900MHZ 10W | ||
NXP Semiconductors |
MW6S010GMR1 | FET RF 68V 960MHZ TO270-2GW | |
| MW6S010MR1 | FET RF 68V 960MHZ TO-270-2 | ||
| MW6S010GNR1 | FET RF 68V 960MHZ TO270-2GW | ||
| MW6S010NR1 | RF MOSFET Transistors HV6 900MHZ 10W TO270-2N | ||
| MW6S010GN | Neu und Original | ||
| MW6S010GNR | Neu und Original | ||
| MW6S010N | Neu und Original | ||
| MW6S010NB1 | Neu und Original | ||
| MW6S010NR | Neu und Original |