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| PartNumber | NDD60N745U1-1G | NDD60N745U1T4G | NDD60N745U1-35G |
| Description | MOSFET NFET DPAK 600V 6.8A | MOSFET NFET DPAK 600V 6.8A | MOSFET Power MOSFET 600V 6.8A 745 m_ Single |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Packaging | Tube | Reel | Tube |
| Brand | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 75 | 2500 | 75 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Mounting Style | - | - | Through Hole |
| Package / Case | - | - | IPAK-3 |
| Number of Channels | - | - | 1 Channel |
| Transistor Polarity | - | - | N-Channel |
| Vds Drain Source Breakdown Voltage | - | - | 600 V |
| Id Continuous Drain Current | - | - | 6.6 A |
| Rds On Drain Source Resistance | - | - | 610 mOhms |
| Vgs th Gate Source Threshold Voltage | - | - | 2 V |
| Vgs Gate Source Voltage | - | - | 25 V |
| Qg Gate Charge | - | - | 15 nC |
| Minimum Operating Temperature | - | - | - 55 C |
| Maximum Operating Temperature | - | - | + 150 C |
| Pd Power Dissipation | - | - | 84 W |
| Configuration | - | - | Single |
| Channel Mode | - | - | Enhancement |
| Transistor Type | - | - | 1 N-Channel |
| Forward Transconductance Min | - | - | 5.6 S |
| Fall Time | - | - | 7 ns |
| Rise Time | - | - | 10 ns |
| Typical Turn Off Delay Time | - | - | 19 ns |
| Typical Turn On Delay Time | - | - | 8 ns |
| Unit Weight | - | - | 0.139332 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
NDD60N745U1-1G | MOSFET NFET DPAK 600V 6.8A | |
| NDD60N745U1T4G | MOSFET NFET DPAK 600V 6.8A | ||
| NDD60N745U1-35G | MOSFET Power MOSFET 600V 6.8A 745 m_ Single | ||
| NDD60N745U1-1G | MOSFET N-CH 600V 6.8A IPAK-4 | ||
| NDD60N745U1-35G | MOSFET N-CH 600V 6.8A IPAK-3 | ||
| NDD60N745U1T4G | MOSFET N-CH 600V 6.8A DPAK-3 | ||
| NDD60N745U1 | Neu und Original |