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| PartNumber | NDD60N900U1-1G | NDD60N900U1T4G | NDD60N900U1-35G |
| Description | MOSFET NFET DPAK 600V 5.9A | MOSFET NFET DPAK 600V 5.9A | MOSFET N-CH 600V 5.9A IPAK-3 |
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Packaging | Tube | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 75 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | TO-252-3 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 600 V | - |
| Id Continuous Drain Current | - | 5.7 A | - |
| Rds On Drain Source Resistance | - | 820 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Qg Gate Charge | - | 12 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 74 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 4.3 S | - |
| Fall Time | - | 6 ns | - |
| Rise Time | - | 9 ns | - |
| Typical Turn Off Delay Time | - | 17 ns | - |
| Typical Turn On Delay Time | - | 7 ns | - |
| Unit Weight | - | 0.011993 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
ON Semiconductor |
NDD60N900U1-1G | MOSFET NFET DPAK 600V 5.9A | |
| NDD60N900U1T4G | MOSFET NFET DPAK 600V 5.9A | ||
| NDD60N900U1-1G | MOSFET N-CH 600V 5.9A IPAK-4 | ||
| NDD60N900U1-35G | MOSFET N-CH 600V 5.9A IPAK-3 | ||
| NDD60N900U1T4G | MOSFET N-CH 600V 5.9A DPAK-3 |