 |  | | |
| PartNumber | NE5550234-AZ | NE55410GR-T3-AZ | NE55410GR-AZ |
| Description | RF MOSFET Transistors Pout 33dBm Gain 23.5dB | RF MOSFET Transistors Silicon Medium Pwr LDMOSFET | RF MOSFET Transistors N-Ch Power LDMOS FET |
| Manufacturer | CEL | CEL | CEL |
| Product Category | RF MOSFET Transistors | Transistors - FETs, MOSFETs - Single | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Packaging | Bulk | Reel | - |
| Brand | CEL | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 1 | - | - |
| Subcategory | MOSFETs | - | - |
| Type | - | RF Power MOSFET | RF Power MOSFET |
| Unit Weight | - | 0.002212 oz | 0.002212 oz |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package Case | - | HTSSOP-16 | HTSSOP-16 |
| Gain | - | 13.5 db at 2.14 GHz | 13.5 db at 2.14 GHz |
| Output Power | - | 10 W | 10 W |
| Pd Power Dissipation | - | 40 W | 40 W |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Operating Frequency | - | 0.1 GHz to 2.6 GHz | 0.1 GHz to 2.6 GHz |
| Vgs Gate Source Voltage | - | +/- 7 V | +/- 7 V |
| Id Continuous Drain Current | - | 1 A | 1 A |
| Vds Drain Source Breakdown Voltage | - | 65 V | 65 V |
| Vgs th Gate Source Threshold Voltage | - | 2.8 V | 2.8 V |
| Transistor Polarity | - | N-Channel | N-Channel |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Texas Instruments |
NE555D | Timers & Support Products SINGLE PRECISION TIMER | |
| NE555DE4 | Timers & Support Products SINGLE PRECISION TIMER | ||
| NE555D | IC OSC SINGLE TIMER 8-SOP | ||
CEL |
NE5550979A-EV04-A | RF MOSFET Transistors Pout 39.5dBm PAE 66% Eval Brd for 460MHz | |
| NE5550234-EV04-A | Other Development Tools Pout 33dBm PAE 68% Eval Brd for 460MHz | ||
| NE5550234-AZ | RF MOSFET Transistors Pout 33dBm Gain 23.5dB | ||
| NE5550234-EV09-A | Other Development Tools Pout 33dBm PAE 68% Eval Brd for 900MHz | ||
| NE5550979A-EV09-A | RF MOSFET Transistors Pout 39.5dBm PAE 66% Eval Brd for 900MHz | ||
| NE5550234-T1-AZ | FET RF 30V 900MHZ 3MINIMOLD | ||
| NE5550979A-EV04-A | RF MOSFET Transistors Pout 39.5dBm PAE 66% Eval Brd for 460MHz | ||
| NE5550979A-EV09-A | RF MOSFET Transistors Pout 39.5dBm PAE 66% Eval Brd for 900MHz | ||
| NE55410GR-T3-AZ | RF MOSFET Transistors Silicon Medium Pwr LDMOSFET | ||
| NE55410GR-AZ | RF MOSFET Transistors N-Ch Power LDMOS FET | ||
| NE5550979A-A | RF MOSFET Transistors Pout 39.5dBm PAE 66% Gain 22dB | ||
| NE5550234-AZ | RF MOSFET Transistors Pout 33dBm Gain 23.5dB | ||
| NE5550979A-T1-A | FET RF 30V 900MHZ 79A-PKG | ||
| NE555D/ST | INSTOCK | ||
| NE5537H | Neu und Original | ||
| NE5537N-NE5537 | Neu und Original | ||
| NE5539 | Neu und Original | ||
| NE5539A | Neu und Original | ||
| NE5539D. | Neu und Original | ||
| NE5539N | Operational Amplifier, Single AMP, Bipolar, 14 Pin, Plastic, DIP | ||
| NE555(ROHS) | Neu und Original | ||
| NE555-CN | Neu und Original | ||
| NE555-S | Neu und Original | ||
| NE555/556/5532 | Neu und Original | ||
| NE555/LM386N-1 | Neu und Original | ||
| NE555/NE555P | Neu und Original | ||
| NE5550234-T1 | Neu und Original | ||
| NE5550979A-T1 | Neu und Original | ||
| NE5550979A-T1-A , EM5102 | Neu und Original | ||
| NE5550979A-T1-A , EM5102AGE | Neu und Original | ||
| NE5550979A-T1A-AZ | Neu und Original | ||
| NE5553H | Neu und Original | ||
| NE5555 | Neu und Original | ||
| NE5555P | Neu und Original | ||
| NE555ADR | Neu und Original | ||
| NE555CD | Neu und Original | ||
| NE555CN | Neu und Original | ||
| NE555D-T | SQUARE, TIMER, PDSO8 | ||
| NE5537N | INSTOCK | ||
| NE5539D | Operational Amplifier, Single AMP, Bipolar, 14 Pin, Plastic, SOP | ||
| NE5539F | INSTOCK | ||
| NE555 | INSTOCK | ||
| NE5554H | Neu und Original | ||
| NE5554N | Neu und Original | ||
| NE5556AM | Neu und Original | ||
| NE555C | Neu und Original | ||
| NE555 NE555 | Neu und Original |