NE6501

NE650103M-A vs NE65010 vs NE650103M

 
PartNumberNE650103M-ANE65010NE650103M
DescriptionRF JFET Transistors L&S Band GaAs MESFETRF JFET Transistors
ManufacturerCEL-NEC
Product CategoryRF JFET Transistors-RF FETs
RoHSY--
Transistor TypeMESFET--
TechnologyGaAs--
Gain11 dB--
Vds Drain Source Breakdown Voltage15 V--
Vgs Gate Source Breakdown Voltage- 7 V--
Id Continuous Drain Current7 A--
Output Power40 dBm--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation33 W--
Mounting StyleSMD/SMT--
Package / Case3M--
PackagingBulk--
Operating Frequency2.3 GHz--
ProductRF JFET--
TypeGaAs MESFET--
BrandCEL--
P1dB Compression Point40 dBm--
Product TypeRF JFET Transistors--
Factory Pack Quantity1--
SubcategoryTransistors--
Hersteller Teil # Beschreibung RFQ
CEL
CEL
NE650103M-A RF JFET Transistors L&S Band GaAs MESFET
NE650103M-A FET RF 15V 2.3GHZ 3M
NE65010 Neu und Original
NE650103M RF JFET Transistors
NE6501077 Neu und Original
Top