NE85639

NE85639-A vs NE85639-T1-A vs NE85639-T1-R27-A

 
PartNumberNE85639-ANE85639-T1-ANE85639-T1-R27-A
DescriptionRF Bipolar Transistors NPN High FrequencyRF Bipolar Transistors NPN High FrequencyRF TRANS NPN 12V 9GHZ SOT143
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsRF Bipolar TransistorsTransistors - Bipolar (BJT) - RF
RoHSYY-
Transistor TypeBipolarBipolarNPN
TechnologySiSi-
Transistor PolarityNPNNPN-
Collector Emitter Voltage VCEO Max12 V12 V-
Emitter Base Voltage VEBO3 V3 V-
Continuous Collector Current0.1 A0.1 A-
ConfigurationSingleSingle-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-143MiniMold-4-
TypeRF Bipolar Small SignalRF Bipolar Small Signal-
BrandCELCEL-
Pd Power Dissipation200 mW (1/5 W)200 mW (1/5 W)-
Product TypeRF Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity13000-
SubcategoryTransistorsTransistors-
Packaging-Reel*
Height-1.1 mm-
Length-2.9 mm-
Width-1.5 mm-
Part # Aliases-2SC4093-T1-A-
Series---
Package Case--*
Mounting Type--*
Supplier Device Package--*
Power Max--200mW
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--12V
DC Current Gain hFE Min Ic Vce--50 @ 20mA, 10V
Frequency Transition--9GHz
Noise Figure dB Typ f--1.1dB @ 1GHz
Gain--13dB
Hersteller Teil # Beschreibung RFQ
CEL
CEL
NE85639-A RF Bipolar Transistors NPN High Frequency
NE85639-T1-A RF Bipolar Transistors NPN High Frequency
NE85639R-T1-A RF Bipolar Transistors NPN High Frequency
NE85639-T1-R27-A RF TRANS NPN 12V 9GHZ SOT143
NE85639-T1-A RF Bipolar Transistors NPN High Frequency
NE85639-A RF Bipolar Transistors NPN High Frequency
NE85639R-T1-A RF TRANS NPN 12V 9GHZ SOT143R
NE85639-T1-R27 Neu und Original
NE85639/39R Neu und Original
NE85639E Neu und Original
NE85639E-T1 Neu und Original
NE85639R RF Bipolar Transistors NPN High Frequency
NE85639R-T1-27R Neu und Original
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