NE978

NE97833-T1B-A vs NE97833-A vs NE97833

 
PartNumberNE97833-T1B-ANE97833-ANE97833
DescriptionRF Bipolar Transistors PNP High FrequencyRF Bipolar Transistors PNP High FrequencyRF Bipolar Transistors PNP High Frequency
ManufacturerCELCELCEL
Product CategoryRF Bipolar TransistorsTransistors - Bipolar (BJT) - RFTransistors - Bipolar (BJT) - RF
RoHSY--
Transistor TypeBipolarPNPPNP
TechnologySiSiSi
Transistor PolarityPNPPNPPNP
Continuous Collector Current- 0.05 A- 0.05 A- 0.05 A
ConfigurationSingleSingleSingle
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3--
PackagingReelBulk Alternate PackagingBulk Alternate Packaging
Height1.1 mm--
Length2.9 mm--
TypeRF Bipolar Small Signal--
Width1.5 mm--
BrandCEL--
Pd Power Dissipation200 mW (1/5 W)--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Part # Aliases2SA1978-T1B-A--
Unit Weight0.000282 oz0.007090 oz0.007090 oz
Series---
Package Case-TO-236-3, SC-59, SOT-23-3TO-236-3, SC-59, SOT-23-3
Mounting Type-Surface MountSurface Mount
Supplier Device Package-SOT-23SOT-23
Power Max-200mW200mW
Current Collector Ic Max-50mA50mA
Voltage Collector Emitter Breakdown Max-12V12V
DC Current Gain hFE Min Ic Vce-20 @ 15mA, 10V20 @ 15mA, 10V
Frequency Transition-5.5GHz5.5GHz
Noise Figure dB Typ f-2dB @ 1GHz2dB @ 1GHz
Gain-10dB10dB
Pd Power Dissipation-0.2 W0.2 W
Collector Emitter Voltage VCEO Max-- 12 V- 12 V
Emitter Base Voltage VEBO-- 3 V- 3 V
DC Collector Base Gain hfe Min-4040
Hersteller Teil # Beschreibung RFQ
CEL
CEL
NE97833-T1B-A RF Bipolar Transistors PNP High Frequency
NE97833-A RF Bipolar Transistors PNP High Frequency
NE97833-T1B-A RF Bipolar Transistors PNP High Frequency
NE97833 RF Bipolar Transistors PNP High Frequency
NE97833-T1-A Neu und Original
NE97833-T1B Neu und Original
NE97833-T1-A/T93 Neu und Original
Top