PartNumber | NESG250134-EVPW04 | NESG250134-T1-AZ | NESG250134-EV09-AZ |
Description | RF Bipolar Transistors NPN Silicon Medium Pwr Transistor | RF Bipolar Transistors NPN Med Power Amp | RF Bipolar Transistors NPN Silicon Medium Pwr Transisto |
Manufacturer | CEL | CEL | CEL |
Product Category | RF Bipolar Transistors | RF Bipolar Transistors | RF Evaluation and Development Kits, Boards |
RoHS | N | E | - |
Transistor Type | Bipolar | Bipolar | - |
Technology | SiGe | SiGe | - |
Type | RF Silicon Germanium | RF Silicon Germanium | Transistor |
Brand | CEL | CEL | - |
Product Type | RF Bipolar Transistors | RF Bipolar Transistors | - |
Factory Pack Quantity | 1 | 1000 | - |
Subcategory | Transistors | Transistors | - |
Transistor Polarity | - | NPN | - |
DC Collector/Base Gain hfe Min | - | 80 | - |
Collector Emitter Voltage VCEO Max | - | 9.2 V | - |
Emitter Base Voltage VEBO | - | 2.8 V | - |
Continuous Collector Current | - | 500 mA | - |
Configuration | - | Single | - |
Mounting Style | - | SMD/SMT | - |
Package / Case | - | Power Mini-Mold | - |
Packaging | - | Reel | - |
Operating Frequency | - | 900 MHz | - |
Pd Power Dissipation | - | 1.5 W | - |
For Use With Related Products | - | - | NESG250134 |
Series | - | - | - |
Frequency | - | - | - |
Supplied Contents | - | - | Board |