NGTB10

NGTB10N60R2DT4G vs NGTB10N60FG vs NGTB10B60R2DT4G

 
PartNumberNGTB10N60R2DT4GNGTB10N60FGNGTB10B60R2DT4G
DescriptionIGBT Transistors RC2 IGBT 10A 600V DPAKIGBT Transistors NCH IGBT 10A 600V TO220F3
ManufacturerON SemiconductorON Semiconductor-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C20 A--
Pd Power Dissipation72 W--
Maximum Operating Temperature+ 175 C--
PackagingReelTube-
Continuous Collector Current Ic Max10 A--
BrandON SemiconductorON Semiconductor-
Gate Emitter Leakage Current+/- 100 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity250050-
SubcategoryIGBTsIGBTs-
Unit Weight0.012346 oz--
Series-NGTB10N60FG-
Hersteller Teil # Beschreibung RFQ
NGTB10N60R2DT4G IGBT Transistors RC2 IGBT 10A 600V DPAK
NGTB10N60FG IGBT Transistors NCH IGBT 10A 600V TO220F3
NGTB10B60R2DT4G Neu und Original
ON Semiconductor
ON Semiconductor
NGTB10N60FG IGBT Transistors NCH IGBT 10A 600V TO220F3
NGTB10N60R2DT4G IGBT 10A 600V DPAK
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