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| PartNumber | NGTB15N60R2FG | NGTB15N60S | NGTB15N60S1 |
| Description | IGBT Transistors RC2 IGBT 15A 600V | ||
| Manufacturer | ON Semiconductor | ON Semiconductor | ON Semiconductor |
| Product Category | IGBT Transistors | IGBTs - Single | IGBTs - Single |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.85 V | 1.7 V | 1.7 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 24 A | 30 A | 30 A |
| Pd Power Dissipation | 54 W | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Packaging | Tube | Tube | Tube |
| Continuous Collector Current Ic Max | 14 A | - | - |
| Brand | ON Semiconductor | - | - |
| Gate Emitter Leakage Current | +/- 100 nA | 100 nA | 100 nA |
| Product Type | IGBT Transistors | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.211644 oz | 0.081130 oz | 0.081130 oz |
| Series | - | NGTB15N60S1 | NGTB15N60S1 |
| Package Case | - | TO-220-3 | TO-220-3 |
| Input Type | - | Standard | Standard |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | TO-220 | TO-220 |
| Power Max | - | 117W | 117W |
| Reverse Recovery Time trr | - | 270ns | 270ns |
| Current Collector Ic Max | - | 30A | 30A |
| Voltage Collector Emitter Breakdown Max | - | 600V | 600V |
| IGBT Type | - | NPT | NPT |
| Current Collector Pulsed Icm | - | 120A | 120A |
| Vce on Max Vge Ic | - | 1.7V @ 15V, 15A | 1.7V @ 15V, 15A |
| Switching Energy | - | 550μJ (on), 350μJ (off) | 550μJ (on), 350μJ (off) |
| Gate Charge | - | 88nC | 88nC |
| Td on off 25°C | - | 65ns/170ns | 65ns/170ns |
| Test Condition | - | 400V, 15A, 22 Ohm, 15V | 400V, 15A, 22 Ohm, 15V |
| Pd Power Dissipation | - | 47 W | 47 W |
| Collector Emitter Voltage VCEO Max | - | 600 V | 600 V |