 | | | |
| PartNumber | NIC9N05ATS1 | NIC9N05TS1 | NIC9N05ACLF |
| Description | MOSFET 9 A 52 V N-CHANNEL DIE | MOSFET NFET DIE CLAMPEDFET 55V | IGBT Transistors MOSFET DIE / WAFER |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | DIE | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 59 V | 59 V | - |
| Id Continuous Drain Current | 9 A | 2 A | - |
| Rds On Drain Source Resistance | 90 mOhms | 125 mOhms | - |
| Pd Power Dissipation | 1.74 W | - | - |
| Configuration | Single | Single | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Bulk | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 3500 | 3500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.139332 oz | - | - |
| Vgs Gate Source Voltage | - | 15 V | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Channel Mode | - | Enhancement | - |
| Product | - | MOSFET Small Signal | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NIC9N05ATS1 | MOSFET 9 A 52 V N-CHANNEL DIE | ||
| NIC9N05ACLF | IGBT Transistors MOSFET DIE / WAFER | ||
| NIC9N05ATS1 | RF Bipolar Transistors MOSFET 9 A 52 V N-CHANNEL DIE | ||
ON Semiconductor |
NIC9N05TS1 | MOSFET NFET DIE CLAMPEDFET 55V | |
| NIC9N05TS1 | MOSFET NFET DIE CLAMPEDFET 55V |