NJVM

NJVMJD6039T4G vs NJVMJD50T4G vs NJVMJD47T4G

 
PartNumberNJVMJD6039T4GNJVMJD50T4GNJVMJD47T4G
DescriptionBipolar Transistors - BJT BIP DPAK NPN 2A 80VBipolar Transistors - BJT BIP NPN 1A 400V TRBipolar Transistors - BJT BIP NPN 1A 250V TR
ManufacturerON SemiconductorON SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
PackagingReelReelReel
BrandON SemiconductorON SemiconductorON Semiconductor
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
QualificationAEC-Q101AEC-Q101AEC-Q101
Factory Pack Quantity250025002500
SubcategoryTransistorsTransistorsTransistors
Technology-Si-
Mounting Style-SMD/SMT-
Package / Case-DPAK-3-
Transistor Polarity-NPNNPN
Configuration-Single-
Collector Emitter Voltage VCEO Max-400 V-
Collector Base Voltage VCBO-500 V-
Emitter Base Voltage VEBO-5 V-
Collector Emitter Saturation Voltage-1 V-
Maximum DC Collector Current-2 A-
Gain Bandwidth Product fT-10 MHz-
Minimum Operating Temperature-- 65 C-
Maximum Operating Temperature-+ 150 C-
Series-MJD50MJD47
DC Current Gain hFE Max-150 at 300 mA, 10 V-
DC Collector/Base Gain hfe Min-25 at 200 mA, 10 V-
Pd Power Dissipation-15 W-
Unit Weight--0.012381 oz
Hersteller Teil # Beschreibung RFQ
NJVMJD6039T4G Bipolar Transistors - BJT BIP DPAK NPN 2A 80V
NJVMJD50T4G Bipolar Transistors - BJT BIP NPN 1A 400V TR
NJVMJD47T4G Bipolar Transistors - BJT BIP NPN 1A 250V TR
NJVMJE15032G NPN PWR XSTR AUDIO DRV
ON Semiconductor
ON Semiconductor
NJVMJD6039T4G TRANS NPN DARL 80V 4A DPAK
NJVMJD45H11T4G-VF01 TRANS PNP 80V 8A DPAK-4
NJVMJD47T4G Bipolar Transistors - BJT BIP NPN 1A 250V TR
NJVMJD50T4G Bipolar Transistors - BJT BIP NPN 1A 400V TR
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