NJVMJD2 stock, NJVMJD2, NJVMJD243T4G


PartNumber	NJVMJD243T4G	NJVMJD210T4G	NJVMJD253T4G
Description	Bipolar Transistors - BJT BIP NPN 4A 100V TR	Bipolar Transistors - BJT BIP DPAK PNP 5A 25V TR	Trans GP BJT PNP 100V 4A 3-Pin 3DPAK T/R (Alt: NJVMJD253T4G)
Manufacturer	ON Semiconductor	ON Semiconductor	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	DPAK-3	DPAK-3	-
Transistor Polarity	NPN	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	100 V	25 V	-
Collector Base Voltage VCBO	100 V	40 V	-
Emitter Base Voltage VEBO	7 V	8 V	-
Collector Emitter Saturation Voltage	300 mV	1.8 V	-
Maximum DC Collector Current	8 A	10 A	-
Gain Bandwidth Product fT	40 MHz	65 MHz	-
Minimum Operating Temperature	- 65 C	- 65 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	MJD243	MJD210	-
DC Current Gain hFE Max	180 at 200 mA, 1 VDC	180 at 2 A, 1 V	-
Packaging	Reel	Reel	-
Brand	ON Semiconductor	ON Semiconductor	-
Continuous Collector Current	4 A	-	-
DC Collector/Base Gain hfe Min	40 at 200 mA, 1 VDC	45 at 2 A, 1 V	-
Pd Power Dissipation	12.5 W	12.5 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Qualification	AEC-Q101	AEC-Q101	-
Factory Pack Quantity	2500	2500	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.012381 oz	-	-
Technology	-	Si	-

Search Part Number : "NJVMJD2", Match & Start with "NJVMJD2" - Total : 9

Hersteller	Teil #	Beschreibung
	NJVMJD243T4G	Bipolar Transistors - BJT BIP NPN 4A 100V TR
	NJVMJD2955T4G	Bipolar Transistors - BJT BIP PNP 10A 60V TR
	NJVMJD210T4G	Bipolar Transistors - BJT BIP DPAK PNP 5A 25V TR
	NJVMJD253T4G	Trans GP BJT PNP 100V 4A 3-Pin 3DPAK T/R (Alt: NJVMJD253T4G)
	NJVMJD2873T4G	Neu und Original
ON Semiconductor	NJVMJD2955T4G	Bipolar Transistors - BJT BIP PNP 10A 60V TR
	NJVMJD243T4G	Bipolar Transistors - BJT BIP NPN 4A 100V TR
	NJVMJD210T4G	Bipolar Transistors - BJT BIP DPAK PNP 5A 25V TR
	NJVMJD253T4G-VF01	Complementary Silicon Plastic Power Transistors

NJVMJD2