 | | |
| PartNumber | NP109N04PUG-E1-AY | NP109N04PUK-E1-AY |
| Description | MOSFET POWER MOSFET | MOSFET Power MOSFET |
| Manufacturer | Renesas Electronics | Renesas Electronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - |
| Id Continuous Drain Current | 110 A | - |
| Vgs Gate Source Voltage | 20 V | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1.8 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Tube | Tube |
| Product | MOSFET Small Signal | - |
| Transistor Type | 1 N-Channel | - |
| Brand | Renesas Electronics | Renesas Electronics |
| Fall Time | 35 ns | - |
| Moisture Sensitive | Yes | Yes |
| Product Type | MOSFET | MOSFET |
| Rise Time | 35 ns | - |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 90 ns | - |
| Typical Turn On Delay Time | 47 ns | - |
| Unit Weight | 0.077603 oz | 0.077603 oz |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
Renesas Electronics |
NP109N04PUG-E1-AY | MOSFET POWER MOSFET | |
| NP109N04PUK-E1-AY | MOSFET Power MOSFET | ||
| NP109N04PUG-E1-AY | MOSFET N-CH 40V 110A TO-263 | ||
| NP109N04PUK-E1-AY | Trans MOSFET N-CH 40V 110A Automotive 3-Pin(2+Tab) D2PAK T/R | ||
| NP109N04PUG | Neu und Original | ||
| NP109N04PUG-E1 | Neu und Original | ||
| NP109N04PUG-E2-AY | Neu und Original | ||
| NP109N04PUJ | Neu und Original | ||
| NP109N04PUJ-E1B-AY | Neu und Original | ||
| NP109N04PUK | Neu und Original |