 |  |  | |
| PartNumber | NPT1012B | NPT2021 | NPT1010B |
| Description | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN |
| Manufacturer | MACOM | MACOM | MACOM |
| Product Category | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| RoHS | Y | Y | Y |
| Transistor Type | HEMT | HEMT | - |
| Technology | GaN Si | GaN Si | GaN Si |
| Gain | 13 dB | 14.2 dB | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | 160 V | - |
| Vgs Gate Source Breakdown Voltage | 3 V | 3 V | - |
| Id Continuous Drain Current | 4 mA | 14 mA | - |
| Maximum Operating Temperature | + 200 C | + 85 C | - |
| Pd Power Dissipation | 44 W | - | - |
| Mounting Style | Screw Mount | Screw Mount | - |
| Packaging | Tray | Tray | Tray |
| Configuration | Single | Single | - |
| Operating Frequency | 4 GHz | 2.5 GHz | - |
| Brand | MACOM | MACOM | MACOM |
| P1dB Compression Point | 43 dBm | - | - |
| Product Type | RF JFET Transistors | RF JFET Transistors | RF JFET Transistors |
| Rds On Drain Source Resistance | 440 mOhms | 340 mOhms | - |
| Factory Pack Quantity | 30 | 25 | 25 |
| Subcategory | Transistors | Transistors | Transistors |
| Vgs th Gate Source Threshold Voltage | - 1.8 V | - 1.8 V | - |
| Unit Weight | 0.007760 oz | 0.067412 oz | - |
| Output Power | - | 45 W | - |
| Minimum Operating Temperature | - | - 40 C | - |
| Package / Case | - | TO-272 | - |
| Operating Temperature Range | - | - 40 C to + 85 C | - |
| Moisture Sensitive | - | Yes | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
MACOM |
NPT1012B | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | |
| NPT2021 | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | ||
| NPT2022 | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | ||
| NPT25100B | RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN | ||
| NPT1010B | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN | ||
MACOM |
NPT1007B | RF JFET Transistors Transistor, 200W, DC-1.2 GHz | |
| NPT1004D | RF JFET Transistors Transistor, 45W, DC-4.0 GHz | ||
| NPT1004D | RF POWER TRANSISTOR | ||
| NPT1007B | TRANSISTOR GAN DC-1200MHZ 200W | ||
| NPT2010 | RF POWER TRANSISTOR | ||
| NPT2019 | RF POWER TRANSISTOR | ||
| NPT2021-SMBPPR | EVAL BOARD FOR NPT2021 | ||
| NPT2022-SMBPPR | EVAL BOARD FOR NPT2022 | ||
| NPT25015D | RF POWER TRANSISTOR | ||
| NPT35015D | HEMT N-CH 28V 18W 3300-3800MHZ | ||
| NPT35050AB | HEMT N-CH 28V 65W 3300-3800MHZ | ||
| NPT1012B | RF JFET Transistors DC-4.0GHz P1dB 43dBm Gain 13dB GaN | ||
| NPT2022 | RF JFET Transistors DC-2.0GHz 100W Gain 20dB GaN HEMT | ||
| NPT2021 | RF JFET Transistors DC-2.5GHz 45W Gain 16.5dB GaN HEMT | ||
| NPT1010B | RF JFET Transistors DC-2.0GHz P1dB 49dBm Gain 19.7dB GaN | ||
| NPT1 | Sensor Hardware & Accessories FEMA | ||
| NPT1/2 | Switch Hardware NPT1/2 Plug | ||
| NPT-1/2 | Neu und Original | ||
| NPT-1/8-27-PP93 | Neu und Original | ||
| NPT-MM1MF1MF1001 | Neu und Original | ||
| NPT42-M | Switching Power Supplies 45W +5/+12/-12VDC | ||
| NPT-USG | Neu und Original | ||
| NPT-USS-ABC-1 | Neu und Original | ||
| NPT-WSG-ADF-1 | Neu und Original | ||
| NPT071101 | Neu und Original | ||
| NPT1004 | Neu und Original | ||
| NPT1004DT | Neu und Original | ||
| NPT1010 | Neu und Original | ||
| NPT1015 | Neu und Original | ||
| NPT1015B | GaN Wideband Transisto | ||
| NPT1101 | Neu und Original | ||
| NPT2 | Neu und Original | ||
| NPT2018 | RF POWER TRANSISTOR | ||
| NPT2020 | RF POWER TRANSISTOR | ||
| NPT21011S | Neu und Original | ||
| NPT2103S-73_A0ED | Neu und Original | ||
| NPT2104S1B(REEL) | Neu und Original | ||
| NPT25015 | Neu und Original | ||
| NPT250LGBRS | Neu und Original | ||
| NPT25100 | Neu und Original | ||
| NPT3/4 | Neu und Original | ||
| NPT30A | Neu und Original | ||
| NPT35015 | Neu und Original | ||
| NPT35050A | Neu und Original | ||
| NPT25100B | RF JFET Transistors 2.1-2.7GHz 125W Gain 16.5dB GaN |