 |  | ||
| PartNumber | NSBA113EF3T5G | NSBA113EDXV6T1G | NSBA113EDXV6T1 |
| Description | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR | TRANS 2PNP PREBIAS 0.5W SOT563 |
| Manufacturer | ON Semiconductor | ON Semiconductor | - |
| Product Category | Bipolar Transistors - Pre-Biased | Bipolar Transistors - Pre-Biased | - |
| RoHS | Y | Y | - |
| Series | NSBA113EF3 | NSBA113EDXV6 | - |
| Packaging | Reel | Reel | - |
| Brand | ON Semiconductor | ON Semiconductor | - |
| Product Type | BJTs - Bipolar Transistors - Pre-Biased | BJTs - Bipolar Transistors - Pre-Biased | - |
| Factory Pack Quantity | 8000 | 4000 | - |
| Subcategory | Transistors | Transistors | - |
| Configuration | - | Dual | - |
| Transistor Polarity | - | PNP | - |
| Typical Input Resistor | - | 1 kOhms | - |
| Typical Resistor Ratio | - | 1 | - |
| Mounting Style | - | SMD/SMT | - |
| Package / Case | - | SOT-563-6 | - |
| DC Collector/Base Gain hfe Min | - | 3 | - |
| Collector Emitter Voltage VCEO Max | - | 50 V | - |
| Continuous Collector Current | - | - 100 mA | - |
| Peak DC Collector Current | - | 100 mA | - |
| Pd Power Dissipation | - | 357 mW | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| DC Current Gain hFE Max | - | 3 | - |
| Height | - | 0.55 mm | - |
| Length | - | 1.6 mm | - |
| Width | - | 1.2 mm | - |
| Unit Weight | - | 0.000106 oz | - |
| Hersteller | Teil # | Beschreibung | RFQ |
|---|---|---|---|
| NSBA113EF3T5G | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B | ||
| NSBA113EDXV6T1G | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR | ||
ON Semiconductor |
NSBA113EDXV6T1 | TRANS 2PNP PREBIAS 0.5W SOT563 | |
| NSBA113EDXV6T1G | Bipolar Transistors - Pre-Biased SS SOT563 RSTR XSTR TR | ||
| NSBA113EF3T5G | Bipolar Transistors - Pre-Biased PNP DIGITAL TRANSISTOR (B |