NSBC124EP

NSBC124EPDP6T5G vs NSBC124EPDXV6T1G vs NSBC124EPDXV6T5

 
PartNumberNSBC124EPDP6T5GNSBC124EPDXV6T1GNSBC124EPDXV6T5
DescriptionBipolar Transistors - Pre-Biased SOT-963 COMP NBRTBipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNPBipolar Transistors - Pre-Biased 100mA Complementary
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - Pre-BiasedBipolar Transistors - Pre-Biased-
RoHSYY-
ConfigurationSingleDual-
Typical Input Resistor22 kOhms22 kOhms-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-963SOT-563-6-
DC Collector/Base Gain hfe Min6060-
Collector Emitter Voltage VCEO Max50 V50 V-
Continuous Collector Current100 mA0.1 A-
Pd Power Dissipation231 mW357 mW-
SeriesNSBC124EPDP6NSBC124EPDXV6-
PackagingReelReel-
BrandON SemiconductorON Semiconductor-
Product TypeBJTs - Bipolar Transistors - Pre-BiasedBJTs - Bipolar Transistors - Pre-Biased-
Factory Pack Quantity80004000-
SubcategoryTransistorsTransistors-
Transistor Polarity-PNP-
Typical Resistor Ratio-1-
Peak DC Collector Current-100 mA-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
DC Current Gain hFE Max-60-
Height-0.55 mm-
Length-1.6 mm-
Width-1.2 mm-
Unit Weight-0.000106 oz-
Hersteller Teil # Beschreibung RFQ
NSBC124EPDP6T5G Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
NSBC124EPDXV6T5G Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
NSBC124EPDXV6T1G Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
NSBC124EPDXV6T5 Bipolar Transistors - Pre-Biased 100mA Complementary
NSBC124EPDXVT5 , FDH6957 Neu und Original
ON Semiconductor
ON Semiconductor
NSBC124EPDXV6T1 TRANS PREBIAS NPN/PNP SOT563
NSBC124EPDP6T5G Bipolar Transistors - Pre-Biased SOT-963 COMP NBRT
NSBC124EPDXV6T5G Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
NSBC124EPDXV6T1G Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP
Top