NSM

NSM4002MR6T1G vs NSM6056MT1G vs NSM46211DW6T1G

 
PartNumberNSM4002MR6T1GNSM6056MT1GNSM46211DW6T1G
DescriptionBipolar Transistors - BJT DUAL NPN TRANSISTORSBipolar Transistors - BJT NPN TRANSISTOR AND ZENERTRANS NPN PREBIAS/NPN SOT363
ManufacturerON SemiconductorON Semiconductor-
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJT-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSC-74-6SC-74-6-
Transistor PolarityNPNNPN-
ConfigurationDualSingle-
Collector Emitter Voltage VCEO Max40 V, 45 V40 V-
Collector Base Voltage VCBO60 V, 50 V60 V-
Emitter Base Voltage VEBO6 V, 5 V6 V-
Collector Emitter Saturation Voltage300 mV, 700 mV400 mV-
Maximum DC Collector Current200 mA, 500 mA900 mA-
Gain Bandwidth Product fT300 MHz, 100 MHz250 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
DC Current Gain hFE Max300, 600--
PackagingReelReel-
BrandON SemiconductorON Semiconductor-
Continuous Collector Current200 mA, 500 mA600 mA-
DC Collector/Base Gain hfe Min30 at 100 mA, 1 V, 40 at 500 mA, 1 V--
Pd Power Dissipation500 uW380 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Series-NSM6056M-
  • Beginnen mit
  • NSM 232
Hersteller Teil # Beschreibung RFQ
ON Semiconductor
ON Semiconductor
NSM80100MT1G Bipolar Transistors - BJT PNP TRANS & SWCH DIODE
NSM80101MT1G Bipolar Transistors - BJT NPN TRANS & SWCH DIODE
NSM4002MR6T1G Bipolar Transistors - BJT DUAL NPN TRANSISTORS
NSM6056MT1G Bipolar Transistors - BJT NPN TRANSISTOR AND ZENER
NSM46211DW6T1G TRANS NPN PREBIAS/NPN SOT363
NSM80101MT1G Bipolar Transistors - BJT NPN TRANS & SWCH DIODE
NSM6056MT1G Bipolar Transistors - BJT NPN TRANSISTOR AND ZENER
NSM80100MT1G Bipolar Transistors - BJT PNP TRANS & SWCH DIODE
NSM4002MR6T1G Bipolar Transistors - BJT DUAL NPN TRANSISTORS
Yageo
Yageo
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